advanced power dual n-channel enhancement electronics corp. mode power mosfet low on-resistance bv dss 60v simple drive requirement r ds(on) 50m surface mount package i d 5a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =100 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without n otice 1 ap9971gm-hf -55 to 150 201501124 halogen-free product -55 to 150 parameter rating drain-source voltage 60 gate-source voltage + 25 drain current, v gs @ 10v 3 5 linear derating factor 0.016 drain current, v gs @ 10v 3 3.2 pulsed drain current 1 30 total power dissipation 2 thermal data parameter storage temperature range operating junction temperature range s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1 ap9971 series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.06 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 50 m v gs =4.5v, i d =2.5a - - 60 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 16 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =48v ,v gs =0v - - 25 ua i gss gate-source leakage v gs = + 25v, v ds =0v - - + 100 na q g total gate charge i d =5a - 32.5 - nc q gs gate-source charge v ds =48v - 4.9 - nc q gd gate-drain ("miller") charge v gs =10v - 8.8 - nc t d(on) turn-on delay time v ds =30v - 9.6 - ns t r rise time i d =5a - 10 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 30 - ns t f fall time r d =6 - 5.5 - ns c iss input capacitance v gs =0v - 1658 - pf c oss output capacitance v ds =25v - 156 - pf c rss reverse transfer capacitance f=1.0mhz - 109 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.6a, v gs =0v - - 1.2 v trr reverse recovery time i s =5a, v gs =0 v , - 29.2 - ns qrr reverse recovery charge di/dt=100a/s - 48 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap9971gm-hf
ap9971gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 5 10 15 20 25 30 35 0 1 2 3 4 5 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 6.0v 4.5v v g =3.0v 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v) 0 5 10 15 20 25 30 35 0 1 2 3 4 5 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c v g =3.0v 10v 6.0v 4.5v 0.01 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =5a 30 35 40 45 50 55 2 4 6 8 10 v gs , gate-to-source voltage (v) r dson (m ? ) i d =5a t a =25 o c
ap9971gm-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz ciss crss coss 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 40 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =38v v ds =48v i d =5a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a t t rthja = 135 /w 0.02
marking information 5 ap9971gm-hf 9971gm ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
|
